DSAZIHA1000111447.pdf by International Rectifier
- IRF7509PbF-1 HEXFET® Power MOSFET N-CH 30 VDS RDS(on) max (@VGS = 10V) Q g (typical) ID (@TA = 25°C) P-CH -30 V S1 N-CHANNEL MOSFET 1 8 D1 0.11 0.2 Ω G1
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