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    DSAZIHA1000111448.pdf by International Rectifier

    • IRF8910PbF-1 HEXFET® Power MOSFET VDS 20 V S1 RDS(on) max 18.3 (@VGS = 4.5V) Qg (typical) 7.4 (@TA = 25°C) A 7 D1 3 6 D2 4 5 D2 nC 10
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    • Obsolete
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