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IRGP4760PbF
IRGP4760-EPbF
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Insulated Gate Bipolar Transistor
VCES = 650V
C
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IC = 60A, TC =100°C
tSC ï³ï 5.5µs, TJ(max) = 175°C
G
C
VCE(ON) typ. = 1.7V @ IC =