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DSAZIHA1000111477.pdf
by International Rectifier
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IRGP4790PbF IRGP4790-EPbF  Insulated Gate Bipolar Transistor VCES = 650V  IC = 90A, TC =100°C tSC ï³ï 5.5µs, TJ(max) = 175°C  C  E G VCE(ON) typ. = 1.7V @ I
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