DSA00507288.pdf by Renesas Technology

Partial File Text HAT2196C Silicon N Channel MOS FET Power Switching REJ03G1235-0500 Rev.5.00 Jun. 13, 2005 Features · Low on-resistance RDS(on) = 45 m typ. (at VGS = 4.5 V) · Low drive current. · High dens
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