DASF0021875.pdf by Freescale Semiconductor

Partial File Text Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BW
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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