This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
Freescale Semiconductor
Technical Data
Document Number: MRFG35003N6
Rev. 6, 1/2008
MRFG35003N6T1
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BW