DSAZIHA1000199440.pdf by Toshiba

Partial File Text TC58NYG3S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT (1G Ã 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYG3S0F is a single 1.8V 8 Gbit (9,076,473,856 bits) NAND El
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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