DSADA0022384.pdf by Philips Semiconductors

Partial File Text High efficiency LDMOS 4th Generation LDMOS boosts fuels 3G basestations performance of W-CDMA amplifiers To support high efficiency requirements of basestation power amplifiers, Philips 0.6 µm 4th
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BLF4G10-120 BLF4G22-100 BLF4G22-130 BLF4G22-45 digital predistortion dpd 2carrier WCDMA