DSAZIHA1000199719.pdf by Toshiba

Partial File Text HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse cur
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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