DSA00263361.pdf by California Eastern Laboratories

Partial File Text PRELIMINARY DATA SHEET NEC's ø30 µm InGaAs APD IN DIP PACKAGE NR8360JP-BC FOR OTDR APPLICATION FEATURES DESCRIPTION · HIGH QUANTUM EFFICIENCY: = 85 % @ = 1310 nm = 80 % @ = 1550 nm
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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APD 1550 nm apd 1550 OTDR APD for fiber test avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs apd photodiode InGaAs APD photodiode 1550 InGaas APD photodiode, 1550 sensitivity InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 nec InGaas PIN photodiode, 1550 sensitivity application NR8360JP-BC pin Photodiode 1550 nm