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Partial File Text Internally Matched Power GaAs FETs FEATURES · High Output Power: P-idg = 35.5dBm (Typ.) · · · · · · High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Ban
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FLM1011-4D GaAs FETs