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    • HiPerFETTM Power MOSFETs L° w Gate-Ch TVPeS = S u ,,t9 Q /P î\ Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON) Wort) Tc=25 C T_=25 C A m l) ® G (on) 4 ^ ) ISOPLUS220TM (
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