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Partial File Text F LC 081 X P GaAs FET and H E M T Chips FEATURES · · · · High Output Power: P-|dB = 28.5dBm(Typ.) High Gain: G ^ b = 7.0dB(Typ.) High PAE: r ia(jç| = 31.5%(Typ.) Proven Reliability fujÎtsu DE
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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