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Partial File Text FLK102XV GaAs FET and H E M T Chips FEATURES · · · · High Output Power: P-|dB = 30.0dBm(Typ.) High Gain: G-j^B = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability f u j Ït s u I Dra
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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