DSA00359146.pdf by STMicroelectronics

Partial File Text STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ESD gate-emitter
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Active
Price & Stock
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