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Partial File Text ï»¿bbSBTBl 0055B07 HAPX BFR200 N-channel junction field-effect transistor N AP1ER PHILIPS/DISCRETE b7E D FEATURES â¢ Ultra-low leakage performance Hgss max. 3 pA); important for use in highly se
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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