DSAUTAZ0020287.pdf by Fairchild Semiconductor

Partial File Text FCB36N60N N-Channel MOSFET March 2013 FCB36N60N N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 m Features · RDS(on) = 81 m (Typ.)@ VGS = 10 V, ID = 18 A · Ultra low gate charge (Typ. Qg = 86 nC)
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