DSA00361776.pdf by STMicroelectronics

Partial File Text AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction (BJT) and Fie
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"RF Power Transistors" amplitude modulation applications AN1223 bipolar junction transistor LDMOS LDMOS digital mosfet high power rf ldmos

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