DSAUTAZ0020734.pdf by Fairchild Semiconductor

Partial File Text FQT7N10 N-Channel MOSFET March 2013 100 V, 1.7 A, 350 m Description N-Channel QFET® MOSFET Features · 1.7 A, 100 V, RDS(on)=350 m(Max.) @VGS=10 V, ID=0.85 A · Low Gate Charge (Typ. 5.8 nC)
Datasheet Type Original
RoHS No
Pb Free No
Lifecycle Obsolete
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Equivalent Parts !
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

FQT7N10 FQT7N10LTF FQT7N10LD84Z FQT7N10L FQT7N10L99Z

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