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n ix Y S
MegaMOSTMFET IXTH/IXTM 12N90 VD S S = 900 V lD 2 5 =12 A
^D S (on) " ^
N-Channel Enhancement Mode
Symbol
V DSS vD G R VQ S v GSM
^D25 d m
Test Conditions
T j =25°C to 150°C T j
