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    DSACRA000011606.pdf by IXYS

    • Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA12N300HV IXBT12N300HV VCES = 3000V IC110 = 12A VCE(sat) 3.2V TO-263 (IXBA) G E Symb
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