DSA0074779.pdf by Advanced Power Technology

Partial File Text MRF941 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · · Fully Implanted Base and Emitter Structure. High Gain, GNF = 15 dB @ 1 GHz Low Noise Figure 1.3dB @ 1GHz Ftau - 8.0 GHz @ 6
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