DASF0026911.pdf by NEC

Partial File Text DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES · Super low noise figure and high associated gain NF = 0.4 dB TYP.,
Datasheet Type Original
RoHS No
Pb Free Unknown
Lifecycle Transferred
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NE3509M04-A NE3509M04

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