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Partial File Text IXYS IGBT with Diode IXSN 80N60AU1 v CES v CE(sat) Short Circuit SO A Capability G P relim inary data 04E Symbol V CES Test Conditions Tj - 25°C to 150°C Tj = 25C C to 150°C; RG E = 1 M ii Continuo
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80N60AU1 IXYS IGBT