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Ultra-Low VC E (s a t) IGBT with Diode
IXGH 38N60U1
V CES
v
^C25 CE(sat)
= 600 V = 76 A = 1.8V
Symbol VC E S VC G B VGES v GEM ^ C 2 5 ^ C 9 0
' cm
Test Conditions ^ = 25°C to 15
