DSA00269215.pdf by Central Semiconductor

Partial File Text PROCESS CP289 Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip PROCESS DETAILS Die Size 167 x 167 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 59 x 29 MILS
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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CP289 MJE130 MJE13009

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