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Insulated Gate Bipolar Transistors (IGBT)
G series with high gain
Type V C S S : 'c : £ 'c
'
V C g(ss() ; ^tss " Cre* max* typ. typiv:;2.5 25 2.5 1.8 2.5 1.8 2.5 1.8 3.5 4.0
. TJm = 15° C
