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Partial File Text Insulated Gate Bipolar Transistors (IGBT) G series with high gain Type V C S S : 'c : £ 'c ' V C g(ss() ; ^tss " Cre* max* typ. typiv:;2.5 25 2.5 1.8 2.5 1.8 2.5 1.8 3.5 4.0 . TJm = 15° C
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10N60A 200n60 200N60A 20n60a 25N100 25N120 25N120A 30n60 30N60A 40N60A 60n60 igbt smd G 40N60 igbt IGBT 10N60 igbt 20n60 igbt 30N60 ixgh 1500 ixGh 40N60 a