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    DSA00514279.pdf by Chino-Excel Technology

    • CES2302 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 55m (typ) @VGS = 4.5V. RDS(ON) = 82m (typ) @VGS = 2.5V. High dense cell design for extremely low RDS(ON).
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