DSA00514426.pdf by Dallas Semiconductor

Partial File Text DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES Low-power CMOS design Standby current - 50 nA max at tA = 25°C VCC = 3.0V - 100 nA max at tA = 25°C VCC = 5.5V - 1 µA max at
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Pb Free Unknown
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DS2016 DS2016-100 DS2016-150 DS2016R DS2016S

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