DSA00514954.pdf by Chino-Excel Technology

Partial File Text CEH3456 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 5.5A, RDS(ON) = 42m @VGS = 10V. RDS(ON) = 59m @VGS = 4.5V. High dense cell design for extremely low RDS(O
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CEH3456 transistor sec 623