DSAZIHA2X0008286.pdf by International Rectifier
- IRFH5010PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h
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