DASF0030262.pdf
by Toshiba
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1SS394
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS394
High Speed Switching Application
Unit: mm
Small package
Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Absol
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Original
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Yes
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No
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Active
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