DSA00385133.pdf by NEC

Partial File Text 3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS (Units in mm) · HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA,
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GSM1800 ne551027 NE5510279A NE5510279A-T1