DSASW0093665.pdf by Chino-Excel Technology

Partial File Text CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS(ON) = 23m @VGS = 4.5V. D RDS(ON) = 34m @VGS = 2.5V. Super High dense cell design for extremely
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Pb Free Unknown
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