DSASW0093778.pdf by Chino-Excel Technology

Partial File Text CEP51A3/CEB51A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 48A, RDS(ON) =16.5m @VGS = 10V. RDS(ON) =28m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON).
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