DSASW0093882.pdf by Chino-Excel Technology

Partial File Text CEH2288 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS(ON) = 26m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged a
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