This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 250mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 55ns
q No secon
