DASF0032593.pdf
by Toshiba
- 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Ultra-small package Absolute Maxi
- Original
- Yes
- No
- Active
-
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