DASF0034155.pdf by Toshiba

Partial File Text 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse current : IR
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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