Scans-0058203.pdf
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- TOSHIBA_1SS385 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 3 8 5 HIGH SPEED SWITCHING. Unit in mm ⢠Low Forward Voltage : Vp (2) = 0.23V (Typ.) @Ip = 5mA ⢠Small Package M
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