DASF0034807.pdf
by Toshiba
- 1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maxi
- Original
- Yes
- No
- Active
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