DSACRA00006332.pdf by Renesas Electronics

Partial File Text Data Sheet NESG7030M04 NPN Silicon Germanium Carbon RF Transistor FEATURES · The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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