DASF0035430.pdf by Infineon Technologies

Partial File Text BSC252N10NSF G OptiMOSTM2 Power-Transistor Product Summary Features V DS 100 V · Very low gate charge for high frequency applications R DS(on),max 25.2 m · Optimized f
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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252N10NS BSC25 BSC252N10NSF IEC61249-2-21

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