DSACRA00007848.pdf by Mitsubishi

Partial File Text < Power GaAs HEMT > MGF4851A Leadless ceramic package DESCRIPTION The MGF4851A power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to K band amplifiers. The lead-les
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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