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DSACRA00007860.pdf
by Mitsubishi
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< Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifier
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GD-32
HEMT marking K
Low Noise Gaas
low noise Micro-X marking "K"
MGF496
MGF4964
MGF4964B
MGF4964BL
Micro-X marking "K"
transistor "micro-x" "marking" 3