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    DASF0035787.pdf by Toshiba

    • 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 (Typ.) Low Series Resistance : rs = 0.35 (Typ.)
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