DASF0035917.pdf by Toshiba
- TOSHIBA S8850A MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · High power - P1dB = 21.5 dBm at f = 15 GHz · High gain - G1dB = 9.0 dB at f = 15 GHz · Suitable for Ku-Band amp
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