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TC58NYM9S3EBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
512M BIT (64M Ã 8 BIT) CMOS NAND E PROM
DESCRIPTION
The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND E